2007-04-20 bfp620f 1 1 2 4 3 npn silicon germanium rf transistor* ? high gain low noise rf transistor ? small package 1.4 x 0.8 x 0.59 mm ? outstanding noise figure f = 0.7 db at 1.8 ghz outstanding noise figure f = 1.3 db at 6 ghz ? maximum stable gain g ms = 21 db at 1.8 ghz g ma = 10 db at 6 ghz ? gold metallization for extra high reliability ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description 1 3 4 2 direction of unreeling top view xys esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfp620f r2s 1=b 2=e 3=c 4=e - - tsfp-4 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 2.3 2.1 v collector-emitter voltage v ces 7.5 collector-base voltage v cbo 7.5 emitter-base voltage v ebo 1.2 collector current i c 80 ma base current i b 3 total power dissipation 2) t s 96c p tot 185 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb
2007-04-20 bfp620f 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 290 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 2.3 2.8 - v collector-emitter cutoff current v ce = 7.5 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 50 ma, v ce = 1.5 v, pulse measured h fe 110 180 270 - 1 for calculation of r thja please refer to application note thermal resistance
2007-04-20 bfp620f 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 50 ma, v ce = 1.5 v, f = 1 ghz f t - 65 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.12 0.2 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.2 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.45 - noise figure i c = 5 ma, v ce = 1.5 v, f = 1.8 ghz , z s = z sopt i c = 5 ma, v ce = 1.5 v, f = 6 ghz , z s = z sopt f - - 0.7 1.3 - - db power gain, maximum stable 1) i c = 50 ma, v ce = 1.5 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21 - db power gain, maximum available 1) i c = 50 ma, v ce = 1.5 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 10 - db transducer gain i c = 50 ma, v ce = 1.5 v, z s = z l = 50 ? , f = 1.8 ghz f = 6 ghz | s 21e | 2 - - 19.5 9.5 - - db third order intercept point at output 2) v ce = 2 v, i c = 50 ma, z s = z l =50 ? , f = 1 . 8 ghz ip 3 - 25 - dbm 1db compression point at output i c = 50 ma, v ce = 2 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 14 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2007-04-20 bfp620f 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transistor chip data: is = 0.22 fa vaf = 1000 v ne = 2- var = 2v nc = 2- rbm = 2.707 ? cje = 250.7 ff tf = 1.43 ps itf = 2.4 a vjc = 0.6 v tr = 0.2 ns mjs = 0.5 - xti = 3- af = 2 - titf1 -0.0065 - bf = 425 - ikf = 0.25 a br = 50 - ikr = 10 ma rb = 3.129 ? re = 0.6 - vje = 0.75 v xtf = 10 - ptf = 0 deg mjc = 0.5 - cjs = 128.1 ff nk = -1.42 - fc = 0.8 kf = 7.291e-11 titf2 1.0e-5 nf = 1.025 - ise = 21 fa nr = 1- isc = 18 pa irb = 1.522 ma rc = 2.364 ? mje = 0.3 - vtf = 1.5 v cjc = 124.9 ff xcjc = 1- vjs = 0.52 v eg = 1.078 ev tnom 298 k all parameters are ready to use, no scalling is necessary. package equivalent circuit: l b0 = 0.22 nh l e0 = 0.28 nh l c0 = 0.22 nh k b0-e0 = 0.1 - k b0-c0 = 0.01 - k e0-c0 = 0.11 - c be = 34 ff c bc = 2 ff c ce = 33 ff l bi = 0.42 nh r lbi = 0.15 ? l ei = 0.26 nh r lei = 0.11 ? l ci = 0.35 nh r li = 0.13 ? k bi-ei = -0.05 - k bi-ci = -0.08 - k ei- c i = 0.2 - valid up to 6ghz to avoid high complexity of the package equivalent circuit, both emitter leads of tsfp-4 are combined in one electrical connection. r lxi are series resistors for the inductances l xi and k xa-yb are the coupling coefficients between the inductances l xa and l yb .
2007-04-20 bfp620f 5 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 160 mw 200 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 1 2 3 4 5 6 v 8 v cb 0 0.05 0.1 0.15 0.2 0.25 0.3 pf 0.4 c cb
2007-04-20 bfp620f 6 third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f =1.8ghz 0 10 20 30 40 50 60 70 ma 90 i c -5 0 5 10 15 20 dbm 30 ip 3 0.8v 1.1v 1.4v 1.7v 2.3v transition frequency f t = ? ( i c ) f = 1ghz v ce = parameter in v 0 10 20 30 40 50 60 70 80 ma 100 i c 0 5 10 15 20 25 30 35 40 45 50 55 60 ghz 70 f t 1 to 2.3 0.8 0.5 0.3 power gain g ma , g ms = ? ( i c ) v ce = 1.5v f = parameter in ghz 0 10 20 30 40 50 60 70 ma 90 i c 6 8 10 12 14 16 18 20 22 24 26 db 30 g 0.9 1.8 2.4 3 4 5 6 power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v ce = 1.5v, i c = 50ma 0 1 2 3 4 ghz 6 f 5 10 15 20 25 30 35 40 db 50 g gms gma |s21|2
2007-04-20 bfp620f 7 power gain g ma , g ms = ? ( v ce ) i c = 50ma f = parameter in ghz 0.2 0.6 1 1.4 1.8 v 2.6 v ce -4 0 4 8 12 16 20 24 db 30 g 0.9 1.8 2.4 3 4 5 6 noise figure f = ? ( i c ) v ce = 1.5v, z s = z sopt 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 f = 4ghz f = 2.4ghz f = 5ghz f = 0.9ghz f = 1.8ghz f = 6ghz f = 3ghz i c [ma] f [db] noise figure f = ? ( i c ) v ce = 1.5v, f = 1.8 ghz 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 i c [ma] f [db] z s = 50 ? z s = z sopt noise figure f = ? ( f ) v ce = 1.5v, z s = z sopt 1 2 3 4 5 6 7 0 0.5 1 1.5 2 2.5 f [db] f [ghz] i c = 50ma i c = 5.0ma
2007-04-20 bfp620f 8 source impedance for min. noise figure vs. frequency v ce = 1.5v, i c = 5.0ma/50.0ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 5 1 ?5 ?1 10 0.5 1.5 ?0.5 ?1.5 0.1 ?0.1 0.2 2 ?0.2 ?2 0.3 ?0.3 0.4 3 ?0.4 ?3 4 ?4 ?10 i c = 5.0ma 2.4ghz 3ghz 4ghz 1.8ghz i c = 50ma 6ghz 5ghz
2007-04-20 bfp620f 9 package tsfp-4 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel bfp420f type code pin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 8 pin 1 0.05 0.2 0.05 1.4 12 10? max. 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 manufacturer
2007-04-20 bfp620f 10 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
